Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography
US11037786B2 · kind B2 · utility
2Cited by
9References
16Claims
0Family size
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Key dates
| Filing date | May 6, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | May 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure includes a semiconductor substrate and a multi-layer patterning material film stack formed on the semiconductor substrate. The patterning material film stack includes a resist layer formed over one or more additional layers. The semiconductor structure further includes a metal-containing top coat formed over the resist layer. The metal-containing top coat can be formed, for example, by atomic layer deposition or spin-on deposition over the resist layer, or by self-segregation from the resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.