Daniel A. Corliss
31Patents
5h-index
44Co-inventors
69Inventor score
Filing activity: Jun 28, 1991 → Dec 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5427878A | Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection | Physics | 81 | Expired |
| US5280437A | Structure and method for direct calibration of registration measurement systems to actual semiconductor wafer process topography | Electricity | 18 | Expired |
| US10553522B1 | Semiconductor microcooler | Electricity | 12 | Active |
| US7439001B2 | Focus blur measurement and control method | Physics | 9 | Active |
| US7230681B2 | Method and apparatus for immersion lithography | Physics | 5 | Expired |
| US10553516B1 | Semiconductor microcooler | Electricity | 4 | Active |
| US10642161B1 | Baseline overlay control with residual noise reduction | Physics | 4 | Active |
| US10347486B1 | Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography | Electricity | 3 | Active |
| US10274836B2 | Determination of lithography effective dose uniformity | Physics | 3 | Active |
| US6919146B2 | Planar reticle design/fabrication method for rapid inspection and cleaning | Emerging Cross-Sectional Technologies | 2 | Expired |
| US11037786B2 | Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography | Electricity | 2 | Active |
| US10281826B2 | Determination of lithography effective dose uniformity | Physics | 1 | Active |
| US9104113B2 | Amplification method for photoresist exposure in semiconductor chip manufacturing | Physics | 1 | Active |
| US9709898B2 | Amplification method for photoresist exposure in semiconductor chip manufacturing | Physics | 1 | Active |
| US10490481B1 | Copper microcooler structure and fabrication | Electricity | 1 | Active |
| US10921715B2 | Semiconductor structure for optical validation | Physics | 1 | Active |
| US7807335B2 | Immersion lithography contamination gettering layer | Emerging Cross-Sectional Technologies | 1 | Active |
| US10429743B2 | Optical mask validation | Physics | 1 | Active |
| US10650111B2 | Electrical mask validation | Physics | 1 | Active |
| US10937764B2 | Three-dimensional microelectronic package with embedded cooling channels | Electricity | 1 | Active |
| US8350235B2 | Semiconductor intra-field dose correction | Physics | 1 | Active |
| US10921716B1 | Lithographic dose characterization | Physics | 0 | Active |
| US11049789B2 | Semiconductor microcooler | Electricity | 0 | Active |
| US9451684B2 | Dual pulse driven extreme ultraviolet (EUV) radiation source method | Electricity | 0 | Active |
| US11177130B2 | Patterning material film stack with metal-containing top coat for enhanced sensitivity in extreme ultraviolet (EUV) lithography | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.