IGBT module with heat dissipation structure having copper layers of different thicknesses
US11037857B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Dec 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IGBT module with a heat dissipation structure includes a first layer of chips, a second layer of chips, a first bonding layer, a second bonding layer, a first copper layer, a second copper layer, a thermally-conductive and electrically-insulating layer, and a heat dissipation layer. The first copper layer and the second copper layer are disposed on the thermally-conductive and electrically-insulating layer at intervals. The first layer of chips and the second layer of chips are disposed on the first bonding layer and the second bonding layer, respectively. The number of chips of the first layer of chips is larger than that of the second layer of chips such that the first copper layer has a greater thickness than the second copper layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.