Semiconductor devices and methods of manufacturing the same
US11037872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Apr 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a substrate; a first insulating interlayer on the substrate; a first wiring in the first insulating interlayer on the substrate; an insulation pattern on a portion of the first insulating interlayer adjacent to the first wiring, the insulation pattern having a vertical sidewall and including a low dielectric material; an etch stop structure on the first wiring and the insulation pattern; a second insulating interlayer on the etch stop structure; and a via extending through the second insulating interlayer and the etch stop structure to contact an upper surface of the first wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.