GaN driver using active pre-driver with feedback
US11038503B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Aug 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/08122
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An enhancement mode GaN FET based gate driver circuit including an active pre-driver to drive a high-slew rate, high current output stage GaN FET. Due to the active driver current from the pre-driver, the output stage pull-up FET can turn on faster as compared to a pre-driver that utilizes a passive pull-up load. The active pre-driver must provide a voltage to drive the gate of the output stage pull-up FET which is higher than the normal supply voltage to enable the maximum output level of the driver FET to approach the normal supply voltage. A feedback circuit is included in the active pre-driver to avoid the need for two supply voltages.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.