Photomask including fiducial mark, method of patterning the photomask and method of making semiconductor device using the photomask
US11042084B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Jun 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask includes a pattern region and a plurality of defects in the pattern region. The photomask further includes a first fiducial mark outside of the pattern region, wherein the first fiducial mark includes identifying information for the photomask, the first fiducial mark has a first size and a first shape. The photomask further includes a second fiducial mark outside of the pattern region. The second fiducial mark has a second size different from the first size, or a second shape different from the first shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.