Memory device with improved writing features
US11043255B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2020 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Jun 11, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/229
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method of performing a write access phase for a memory device and comprising:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.