Nonvolatile memory device, storage device, and operating method of nonvolatile memory device
US11043274B2 · kind B2 · utility
2Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2020 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Apr 17, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Each of memory blocks of a nonvolatile memory device includes first memory cells of a first portion of pillar and second memory cells of a second portion of the pillar. When performing program operations based on consecutive addresses at a memory block selected from the memory blocks, the nonvolatile memory device sequentially completes first program operations of non-adjacent memory cells not adjacent to a boundary of the first portion and the second portion from among the first and second memory cells and then completes a second program operation of an adjacent memory cell adjacent to the boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.