Bongsoon Lim
37Patents
3h-index
37Co-inventors
55Inventor score
Filing activity: Jun 3, 2016 → May 10, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9786372B2 | Nonvolatile memory device and wordline driving method thereof | Physics | 4 | Active |
| US10658040B2 | Nonvolatile memory device and storage device including nonvolatile memory device | Physics | 4 | Active |
| US9870833B2 | Nonvolatile memory device including page buffer and method for verifying program operation thereof | Physics | 4 | Active |
| US11043274B2 | Nonvolatile memory device, storage device, and operating method of nonvolatile memory device | Electricity | 2 | Active |
| US11275528B2 | Memory system and method of operating the same | Physics | 2 | Active |
| US11069417B2 | Memory system and method of operating the same | Physics | 2 | Active |
| US11011208B2 | Semiconductor memory device including parallel substrates in three dimensional structures | Electricity | 2 | Active |
| US11227660B2 | Memory device and operating method thereof | Physics | 2 | Active |
| US10546875B2 | Semiconductor memory device including a capacitor | Physics | 2 | Active |
| US11467932B2 | Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping | Electricity | 1 | Active |
| US11355205B2 | Memory device | Electricity | 1 | Active |
| US12131784B2 | Non-volatile memory device | Physics | 1 | Active |
| US11829645B2 | Memory system and method of operating the same | Physics | 0 | Active |
| US11581297B2 | Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the same | Electricity | 0 | Active |
| US11227659B2 | Nonvolatile memory device and storage device including nonvolatile memory device | Physics | 0 | Active |
| US11062775B2 | Nonvolatile memory device and storage device including nonvolatile memory device | Physics | 0 | Active |
| US11367735B2 | Three-dimensional semiconductor devices | Electricity | 0 | Active |
| US11830805B2 | Vertical memory device | Electricity | 0 | Active |
| US11798629B2 | Nonvolatile memory device, storage device, and operating method of nonvolatile memory device | Electricity | 0 | Active |
| US11797405B2 | Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping | Electricity | 0 | Active |
| US11830558B2 | Memory device | Electricity | 0 | Active |
| US11942154B2 | Non-volatile memory device and method of operating nonvolatile memory device | Electricity | 0 | Active |
| US10796767B2 | Memory device and operating method thereof | Physics | 0 | Active |
| US11200002B2 | Nonvolatile memory device | Electricity | 0 | Active |
| US11854982B2 | Three-dimensional semiconductor memory device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.