Semiconductor device and manufacturing method thereof
US11043419B2 · kind B2 · utility
4Cited by
6References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 6, 2019 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Mar 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/11
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment comprises a semiconductor substrate having a through hole from a first face to a second face on an opposite side to the first face. A metal part is provided inside the through hole. A stacked film is provided between the metal part and an inner side surface of the through hole, and comprises a plurality of different material films of two or more types having a relative permittivity equal to or lower than 6.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.