Semiconductor device and manufacturing method thereof

US11043489B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chia-Wen Chang · Hsinchu, TW
• Hong-Nien Lin · Taichung, TW
• Chien-Hsing Lee · Zhubei City, TW
• Chih-Sheng Chang · Tainan, TW
• Ling-Yen Yeh · Hsinchu, TW
• Wilman Tsai · Saratoga, US
• Yee-Chia Yeo · Baoshan, TW

Key dates

• Filing date: Jul 30, 2018
• Grant date: Jun 22, 2021
• Expiry date: Jul 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.