Metal gate structure and methods thereof
US11043572B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2020 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Jan 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
Abstract
Provided is a metal gate structure and related methods that include forming a first fin and a second fin on a substrate. In various embodiments, the first fin has a first gate region and the second fin has a second gate region. By way of example, a metal-gate line is formed over the first and second gate regions. In some embodiments, the metal-gate line extends from the first fin to the second fin, and the metal-gate line includes a sacrificial metal portion. In various examples, a line-cut process is performed to separate the metal-gate line into a first metal gate line and a second gate line. In some embodiments, the sacrificial metal portion prevents lateral etching of a dielectric layer during the line-cut process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.