System and method for performing a multi-etch process using material-specific behavioral parameters in a 3-D virtual fabrication environment
US11048847B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 1, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Mar 1, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.