Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof
US11049538B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2020 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Mar 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3286
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory device includes a magnetic tunnel junction comprising a free layer, a reference layer, and an insulating tunnel barrier layer located between the free layer and the reference layer, a perpendicular magnetic anisotropy (PMA) ferromagnetic layer that is vertically spaced from the free layer, an electrically conductive, non-magnetic interlayer exchange coupling layer located between the free layer and the PMA ferromagnetic layer. The magnetoresistive memory device is a hybrid magnetoresistive memory device which is programmed by a combination of a spin-torque transfer effect and a voltage-controlled exchange coupling effect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.