Bhagwati Prasad
33Patents
4h-index
18Co-inventors
49Inventor score
Filing activity: Nov 18, 2019 → Dec 13, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10991407B1 | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same | Electricity | 9 | Active |
| US11005034B1 | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same | Electricity | 8 | Active |
| US11056640B2 | Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same | Electricity | 7 | Active |
| US10957711B2 | Ferroelectric device with multiple polarization states and method of making the same | Electricity | 6 | Active |
| US11217289B1 | Spinel containing magnetic tunnel junction and method of making the same | Electricity | 4 | Active |
| US11417379B2 | Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same | Electricity | 4 | Active |
| US11152048B1 | Tunneling metamagnetic resistance memory device and methods of operating the same | Physics | 3 | Active |
| US11871679B2 | Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same | Electricity | 2 | Active |
| US11361805B2 | Magnetoresistive memory device including a reference layer side dielectric spacer layer | Physics | 2 | Active |
| US11069741B2 | Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same | Electricity | 2 | Active |
| US11176981B1 | Spinel containing magnetic tunnel junction and method of making the same | Physics | 2 | Active |
| US11200934B2 | Tunneling metamagnetic resistance memory device and methods of operating the same | Electricity | 2 | Active |
| US11889702B2 | Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same | Electricity | 2 | Active |
| US11049538B2 | Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof | Electricity | 2 | Active |
| US11349066B2 | Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same | Electricity | 2 | Active |
| US10964748B1 | Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same | Electricity | 2 | Active |
| US11411170B2 | Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same | Electricity | 2 | Active |
| US11430813B2 | Antiferroelectric memory devices and methods of making the same | Electricity | 1 | Active |
| US11839162B2 | Magnetoresistive memory device including a plurality of reference layers | Electricity | 1 | Active |
| US11996462B2 | Ferroelectric field effect transistors having enhanced memory window and methods of making the same | Electricity | 1 | Active |
| US11264562B1 | Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same | Electricity | 1 | Active |
| US11502104B2 | Antiferroelectric memory devices and methods of making the same | Electricity | 1 | Active |
| US11443790B2 | Spinel containing magnetic tunnel junction and method of making the same | Electricity | 0 | Active |
| US11545506B2 | Ferroelectric field effect transistors having enhanced memory window and methods of making the same | Electricity | 0 | Active |
| US11404193B2 | Magnetoresistive memory device including a magnesium containing dust layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.