Magnetoresistive random access memory (MRAM) with OTP cells
US11049539B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2020 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Apr 29, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM) array has a corresponding MRAM cell, including a Magnetic Tunnel Junction (MTJ), at an intersection of each row and column. A first row of the array is configured as a single one-time-programmable (OTP) row, wherein a first MRAM cell in a first column is connected to a second MRAM cell in a second column. A first MTJ of the first MRAM cell is connected to a first bit line of the first column, and a second MTJ of the second MRAM cell is not connected to a second bit line of the second column. During a write to the first MRAM cell, write circuitry is configured to connect the first and second bit lines and the corresponding source lines such that the select transistors in the first and second MRAM cells are connected in parallel to drive a write current through the first MTJ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.