Metal contact landing structure
US11049695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2020 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jan 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing methods may be performed to form semiconductor structures that may include three-dimensional memory structures. The methods may include forming a plasma of a fluorine-containing precursor in a remote plasma region of a processing chamber. The methods may include contacting a semiconductor substrate with effluents of the plasma. The semiconductor substrate may be housed in a processing region of the processing chamber. The methods may include selectively cleaning exposed nitride materials with the effluents of the plasma. The methods may also include subsequently depositing a cap material over the cleaned nitride material. The cap material may be selectively deposited on the nitride material relative to exposed regions of a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.