Method for producing patterns in a substrate

US11049724B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Lamia Nouri · Le Bicêtre, FR
• Frederic Gaillard · Grenoble, FR
• Stefan Landis · Tullins, FR
• Nicolas Posseme · Grenoble, FR

Key dates

• Filing date: May 24, 2018
• Grant date: Jun 29, 2021
• Expiry date: May 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/30635
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing at least one pattern in a substrate is provided, including providing a substrate having a front face surmounted by at least one masking layer carrying at least one mask pattern, carrying out an ion implantation of the substrate so as to form at least one first zone having a resistivity ρ1 less than a resistivity ρ2 of at least one second non-modified zone, after the ion implantation step, immersing the substrate in an electrolyte, and removing the at least one first zone selectively at the at least one second zone, the removing including at least an application of an electrochemistry step to the substrate to cause a porosification of the at least one first zone selectively at the at least one second zone.