SiC freestanding film structure
US11049747B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 28, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Aug 28, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A SiC Freestanding Film Structure capable of preventing a functional surface of a SiC Freestanding Film Structure from being affected by a film thickness and improving strength by increasing the film thickness, the SiC Freestanding Film Structure is formed by depositing a SiC layer through a vapor deposition type film formation method. The SiC layer is deposited with respect to a first SiC layer serving as a functional surface in the SiC Freestanding Film Structure. Focusing on the functional surface and a non-functional surface positioned on front and back sides of any particular portion, the functional surface has smoothness higher than that of the non-functional surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.