Method for producing semiconductor device
US11049825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2017 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Dec 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a semiconductor device of the present invention includes: step (I) of disposing one or more semiconductor elements each having an active surface, on a thermosetting resin film containing a thermosetting resin composition, such that the thermosetting resin film and the active surfaces of the semiconductor elements come into contact; step (II) of encapsulating the semiconductor elements disposed on the thermosetting resin film with a member for semiconductor encapsulation; step (III) of providing openings in the thermosetting resin film or a cured product thereof after step (II), the openings extending to the active surfaces of the semiconductor elements; and step (IV) of filling the openings with a conductor or forming a conductor layer inside the openings.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.