Bond wire array for packaged semiconductor device
US11049837B2 · kind B2 · utility
0Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jul 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A packaged radio frequency (RF) amplifier device includes a flange and a transistor die mounted to the flange. The transistor die includes an output terminal. The packaged RF amplifier device includes a first bond wire array including a first plurality of bond wires. Each bond wire in the first plurality of bond wires is electrically coupled to the output terminal of the transistor die. A first ground loop area of a first bond wire in the first plurality of bond wires is greater than a second ground loop area of a second bond wire in the first plurality of bond wires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.