Image sensor

US11049892B2 · kind B2 · utility

Assignee

• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Axel Crocherie · Grenoble, FR
• Denis Rideau · Grenoble, FR

Key dates

• Filing date: Jun 25, 2019
• Grant date: Jun 29, 2021
• Expiry date: Jun 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/199

Abstract

A multispectral image sensor includes a semiconductor layer and a number of pixels formed inside and on top of the semiconductor layer. The pixels include a first pixel of a first type formed inside and on top of a first portion of the semiconductor layer and a second pixel of a second type formed inside and on top of a second portion of the semiconductor layer. The first pixel has a first thickness that defines a vertical cavity resonating at a first wavelength and the second pixel has a second thickness different from the first thickness. The second thickness defines a vertical cavity resonating at a second wavelength different than the first wavelength.