Denis Rideau
15Patents
1h-index
15Co-inventors
47Inventor score
Filing activity: May 18, 2012 → Feb 27, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10903259B2 | Image sensor | Electricity | 1 | Active |
| US9305828B2 | Method of forming stressed SOI layer | Electricity | 1 | Active |
| US9240466B2 | Method of introducing local stress in a semiconductor layer | Electricity | 1 | Active |
| US9331175B2 | Method of locally stressing a semiconductor layer | Electricity | 1 | Active |
| US9318372B2 | Method of stressing a semiconductor layer | Electricity | 1 | Active |
| US11581449B2 | Single-photon avalanche photodiode | Emerging Cross-Sectional Technologies | 0 | Active |
| US9514996B2 | Process for fabricating SOI transistors for an increased integration density | Electricity | 0 | Active |
| US11049892B2 | Image sensor | Electricity | 0 | Active |
| US11949035B2 | Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method | Electricity | 0 | Active |
| US9356090B2 | PMOS transistor with improved mobility of the carriers | Electricity | 0 | Active |
| US9543214B2 | Method of forming stressed semiconductor layer | Electricity | 0 | Active |
| US8741704B2 | Metal oxide semiconductor (MOS) device with locally thickened gate oxide | Electricity | 0 | Active |
| US12324251B2 | Integrated circuit comprising a single photon avalanche diode and corresponding manufacturing method | Electricity | 0 | Active |
| US12324250B2 | Single-photon avalanche photodiode | Emerging Cross-Sectional Technologies | 0 | Active |
| US8928051B2 | Metal oxide semiconductor (MOS) device with locally thickened gate oxide | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.