High ruggedness heterojunction bipolar transistor structure
US11049936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | May 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
The disclosure provides a high ruggedness HBT structure, including: a sub-collector layer on a substrate and formed of an N-type III-V semiconductor material; a collector layer on the sub-collector layer and formed of a III-V semiconductor material; a base layer on the collector layer and formed of a P-type III-V semiconductor material; an emitter layer on the base layer and formed of one of N-type semiconductor materials of InGaP, InGaAsP and InAlGaP; a first emitter cap layer on the emitter layer and formed of one of undoped or N-type semiconductor materials of AlxGa1-xAs, AlxGa1-xAs1-yNy, AlxGa1-xAs1-zPz, AlxGa1-xAs1-wSbw, and InrAlxGa1-x-rAs, x having a highest value between 0.05≤x≤0.4, and y, z, r, w≤0.1; a second emitter cap layer on the first emitter cap layer and formed of an N-type III-V semiconductor material; and an ohmic contact layer on the second emitter cap layer and formed of an N-type III-V semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.