Critical dimension uniformity
US11055464B2 · kind B2 · utility
0Cited by
16References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2018 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Apr 27, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method includes receiving a pattern layout for a mask, shrinking the pattern layout to form a shrunk pattern, determining centerlines for each of a plurality of features within the shrunk pattern, and snapping the centerline for each of the plurality of features to a grid. The grid represents a minimum resolution size of a mask fabrication tool. The method further includes, after snapping the centerline for each of the plurality of features to the grid, fabricating the mask with the shrunk pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.