Patent · US Active

Non-volatile memory with selectable hard write

US11056160B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

NXP USA, Inc. · US

Inventors

Richard K. Eguchi · Austin, US
Jon S. Choy · Austin, US
Anirban Roy · Austin, US
Jacob T. Williams · Austin, US
Kerry A. Ilgenstein · Austin, US

Key dates

Filing date	Oct 22, 2019
Grant date	Jul 6, 2021
Priority date	—
Expiry date	Oct 22, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/82
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

As disclosed herein, a non-volatile memory circuit includes an array of memory cells. The non-volatile memory circuit also includes circuitry for performing a hard write to selective bits of addressed cells simultaneously with a normal write to the other bits of the addressed cells during a write operation to the addressed cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.