Apparatus for deep learning operations on resistive crossbar array
US11056185B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2018 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Sep 18, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A system and method are shown for both forward and reverse read operations in a neuromorphic crossbar array that is part of an artificial neural network (ANN). During a forward read operation, a plurality of neuron activations are encoded into a pulse width drive array word line that gates a cell access transistor. A source-follower transistor is biased at a source follower voltage (VRDP) and a column voltage node (BLV) is held at read voltage (VREAD). During a reverse read operation, the cell access transistor operates as another source follower by: encoding a neuron error signal into the column voltage node (BLV), driving a gate line of the cell access transistor to the source follower voltage (VRDP), and holding an intermediate node between the cell access transistor of (a) and the source-follower transistor of (b) at the read voltage (VREAD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.