Semiconductor device having 3D inductor and method of manufacturing the same
US11056555B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | May 28, 2020 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | May 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F2017/0086
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.