Epitaxial structures of semiconductor devices that are independent of local pattern density

US11056591B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Jin Z. Wallner · Albany, US
• Heng Yang · Rexford, US
• Judson R. Holt · Wappingers Falls, US

Key dates

• Filing date: Apr 11, 2019
• Grant date: Jul 6, 2021
• Expiry date: Apr 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A method of forming a semiconductor device is provided, which includes providing gate structures over an active region and forming a hard mask segment on the active region positioned between a first gate structure and a second gate structure. Cavities are formed in the active region using the gate structures and the hard mask segment as masking features, wherein each cavity has a width substantially equal to a minimum gate-to-gate spacing of the semiconductor device. Epitaxial material is grown in the cavities to form substantially uniform epitaxial structures in the active region.