Semiconductor device including variable resistance element
US11056648B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 6, 2020 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | May 6, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a variable resistance device is provided. A variable resistance element according to one embodiment of the present disclosure includes: an ion-receiving layer having a top, a bottom and a sidewall connecting the top to the bottom; an ion supply layer having an inner sidewall connected to at least a portion of the sidewall of the ion-receiving layer; a gate pattern connected to an outer sidewall of the ion supply layer; and a source pattern connected to one of the top or bottom of the ion-receiving layer, and a drain pattern connected to the other one of the top or bottom of the ion-receiving layer, wherein a resistance of the ion-receiving layer varies depending on an amount of ions supplied from the ion supply layer based on a voltage applied to the gate pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.