Memory device and programming method thereof
US11062759B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2020 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Apr 1, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device and a programming method thereof are provided. The memory device includes a memory array, a plurality of word lines and a voltage generator. During a programming procedure, one of the word lines is at a selected state and others of the word lines are at a deselected state. Some of the word lines, which are at the deselected state, are classified into a first group and a second group. The first group and the second group are respectively located at two sides of the word line, which is at the selected state. The voltage generator provides a programming voltage to the word line, which is at the select state, during a programming duration. The voltage generator provides a first two-stage voltage waveform to the word lines in the first group and provides a second two-stage voltage waveform to the word lines in the second group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.