Patent · US Active

Digital address compensation for memory devices

US11062761B1 · kind B1 · utility

0Cited by

2References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Jan Otterstedt · Unterhaching, DE
Wolf Allers · Munich, DE
Christian Peters · Mountain View, US

Key dates

Filing date	Jan 13, 2020
Grant date	Jul 13, 2021
Priority date	—
Expiry date	Jan 13, 2040

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/82
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A position of a memory cell to be accessed within a memory field of a memory device is identified. A region associated with the memory field within which the position is located is identified. A compensation parameter comprising a fixed electric step value for the region is identified. The compensation parameter may be selected from a set of compensation parameters or may be calculated based upon the position of the memory cell. The compensation parameter is applied to an action performed on a line connected to the memory cell during the access of the memory cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.