System and method of reading two pages in a nonvolatile memory
US11062780B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Dec 30, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method(s) and structure(s) for a two-page read operation are described and provide a multiple page read. The two page read operation provides for reading two pages with in a block without reducing the control gates to a low voltage level. The two page read can read the first page using an incrementing voltage level at discrete steps and starting the second page read at the high state for the control gates from the first page read. The second page read then decrements the control gate voltages level through the steps. This should reduce energy consumption. The two-page read operation will also reduce the time as the time period to reset the control gates to a low state are not required in between the page read operations.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.