Stacking structure having material layer on graphene layer and method of forming material layer on graphene layer
US11062818B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jan 2, 2015 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Apr 27, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Example embodiments relate to a stacking structure having a material layer formed on a graphene layer, and a method of forming the material layer on the graphene layer. In the stacking structure, when the material layer is formed on the graphene layer by using an ALD method, an intermediate layer as a seed layer may be formed on the graphene layer by using a linear type precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.