Plasma processing apparatus and plasma processing method
US11062882B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2020 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jan 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus according to an exemplary embodiment includes a chamber, a substrate support, an upper electrode, a radio frequency power source, and a direct-current power source device. The substrate support includes a lower electrode. The lower electrode is provided in the chamber. The upper electrode is provided above the substrate support. The radio frequency power source generates a plasma in the chamber. The direct-current power source device is electrically connected to the upper electrode. The direct-current power source device is configured to periodically generate a pulsed negative direct-current voltage. An output voltage of the direct-current power source device is alternately switched between a negative direct-current voltage and zero volts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.