Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structures
US11063042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Oct 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a first region and a second region is provided. The first region has a first protruding structure and a second protruding structure. The second region has a third protruding structure and a fourth protruding structure. First, second, third, and fourth epi-layers are formed on the first, second, third, and fourth protruding structures, respectively. The first and second epi-layers are covered with a first photoresist layer while leaving the third and fourth epi-layers exposed. A dielectric layer is formed over the first photoresist layer and over the third and fourth epi-layers. A portion of the dielectric layer is covered with a second photoresist layer. The portion of the dielectric layer is formed over the third and fourth epi-layers. Portions of the dielectric layer not protected by the first and second photoresist layers are etched. The first and second photoresist layers are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.