C-axis alignment of an oxide film over an oxide semiconductor film
US11063066B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | May 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/425
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.