Magnetic memory devices and methods of fabrication
US11063088B2 · kind B2 · utility
2Cited by
3References
22Claims
0Family size
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Key dates
| Filing date | Dec 6, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Dec 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3272
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.