Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering
US11063131B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
Described is a ferroelectric-based capacitor that improves reliability of a ferroelectric memory by providing tensile stress along a plane (e.g., x-axis) of a ferroelectric or anti-ferroelectric material of the ferroelectric/anti-ferroelectric based capacitor. Tensile stress is provided by a spacer comprising metal, semimetal, or oxide (e.g., metal or oxide of one or more of: Al, Ti, Hf, Si, Ir, or N). The tensile stress provides polar orthorhombic phase to the ferroelectric material and tetragonal phase to the anti-ferroelectric material. As such, memory window and reliability of the ferroelectric/anti-ferroelectric oxide thin film improves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.