Inventor · Portland, OR, US

Uygar E. Avci

124Patents
9h-index
103Co-inventors
79Inventor score

Filing activity: Dec 22, 2006 → Jan 16, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8217435B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 40 Active
US11063131B2 Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering Electricity 28 Active
US8569812B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 23 Active
US8980707B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 17 Active
US10651182B2 Three-dimensional ferroelectric NOR-type memory Electricity 14 Active
US9275999B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 11 Active
US9520399B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 10 Active
US9418997B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 10 Active
US9209288B2 Reduced scale resonant tunneling field effect transistor Performing Operations; Transporting 9 Active
US8890120B2 Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs Electricity 8 Active
US9786667B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 8 Active
US10121792B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 8 Active
US9646970B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 8 Active
US11355505B2 Vertical backend transistor with ferroelectric material Electricity 7 Active
US11107908B2 Transistors with metal source and drain contacts including a Heusler alloy Electricity 5 Active
US11257822B2 Three-dimensional nanoribbon-based dynamic random-access memory Electricity 5 Active
US10381350B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 3 Active
US10998339B2 One transistor and ferroelectric FET based memory cell Electricity 3 Active
US11581417B2 Improper ferroelectric active and passive devices Electricity 2 Active
US10720434B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 2 Active
US11138499B2 Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuits Physics 2 Active
US9985611B2 Tunnel field-effect transistor (TFET) based high-density and low-power sequential Electricity 2 Active
US10916547B2 Floating body memory cell having gates favoring different conductivity type regions Emerging Cross-Sectional Technologies 2 Active
US10832761B2 Polarization gate stack SRAM Physics 2 Active
US9361059B2 Architecture for seamless integrated display system Physics 2 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.