Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structures
US11063151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2017 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Mar 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Metal chemical vapor deposition approaches for fabricating wrap-around contacts, and semiconductor structures having wrap-around metal contacts, are described. In an example, an integrated circuit structure includes a semiconductor feature above a substrate. A dielectric layer is over the semiconductor feature, the dielectric layer having a trench exposing a portion of the semiconductor feature, the portion having a non-flat topography. A metallic contact material is directly on the portion of the semiconductor feature. The metallic contact material is conformal with the non-flat topography of the portion of the semiconductor feature. The metallic contact material has a total atomic composition including 95% or greater of a single metal species.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.