Patent · US Active

Inverted multijunction solar cells with distributed bragg reflector

US11063168B1 · kind B1 · utility

0Cited by
4References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 29, 2019
Grant dateJul 13, 2021
Priority date
Expiry dateFeb 7, 2040

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

An inverted metamorphic multijunction solar cell comprising: an upper first solar subcell having a first band gap; a middle second solar subcell disposed adjacent to the upper first solar subcell and having a second band gap smaller than said first band gap; a graded interlayer disposed adjacent to the middle second solar subcell and having a band gap that remains constant throughout its thickness; a lower third solar subcell disposed adjacent to said graded interlayer and having a fourth band gap that is smaller than said second band gap such that said third solar subcell is lattice mismatched with respect to said second solar subcell; a back surface field (BSF) layer disposed directly adjacent to the base layer of said lower third solar subcell; at least one distributed Bragg reflector (DBR) layer disposed directly adjacent to the back surface field (BSF) layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.