Low leakage MOSFET supply clamp for electrostatic discharge (ESD) protection
US11063429B2 · kind B2 · utility
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10References
41Claims
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Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Aug 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/819
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.