Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing
US11069402B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2020 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Mar 17, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C7/1006
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is a cell that integrates a pixel and a three-terminal non-volatile memory device. The cell can be selectively operated in write, read and functional computing modes. In the write mode, a first data value is stored in the memory device. In the read mode, it is read from the memory device. In the functional computing mode, the pixel captures a second data value and a sensed change in an electrical parameter (e.g., voltage or current) on a bitline connected to the cell is a function of both the first and second data value. Also disclosed is an IC structure that includes an array of the cells and, when multiple cells in a given column are concurrently operated in the functional computing mode, the sensed total change in the electrical parameter on the bitline for the column is indicative of a result of a dot product computation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.