Through silicon contact structure and method of forming the same
US11069596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Sep 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1434
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a TSC structure, a first dielectric layer is formed over a first main surface of a substrate. The substrate includes an opposing second main surface. A TSC is formed in the first dielectric layer and the substrate so that the TSC passes through the first dielectric layer and extends into the substrate. A conductive plate is formed over the first dielectric layer and electrically coupled with the TSC. An isolation trench is formed in the substrate to surround the conductive plate and spaced apart from the conductive plate. A second dielectric layer is formed on the second main surface of the substrate. A first plurality of vias are formed in the second dielectric layer that extend into the substrate and are connected to the TSC. A second plurality of vias are formed in the second dielectric layer that extend into the substrate and are not connected to the TSC.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.