Image sensor device
US11069734B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 16, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Oct 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/16235
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a back side image sensor device, as well as back side image sensor devices formed, are disclosed. In one such a method, an image sensor wafer having a first dielectric layer with a first surface is obtained. A reconstituted wafer having a processor die and a second dielectric layer with a second surface is obtained. The reconstituted wafer and the image sensor wafer are bonded to one another including coupling the first surface of the first dielectric layer and the second surface of the second dielectric layer. In another method, such formation is for a processor die bonded to an image sensor wafer. In yet another method, such formation is for a processor die bonded to an image sensor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.