Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same
US11069741B2 · kind B2 · utility
2Cited by
7References
18Claims
0Family size
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Key dates
| Filing date | Nov 18, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Nov 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory device includes a first electrode, a second electrode, and a layer stack containing an electric field-modulated magnetic transition layer and a ferroelectric insulator layer located between the first electrode and the second electrode, The electric field-modulated magnetic transition layer includes a non-metallic magnetic material having a ferromagnetic state and a non-ferromagnetic state with a state transition therebetween that depends on an external electric field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.