Transistors with channel and sub-channel regions with distinct compositions and dimensions
US11069795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Integrated circuits include fins including an upper/channel region and a lower/sub-channel region, the lower region having a first chemical composition and opposing sidewalls adjacent to an insulator material, and the upper region having a second chemical composition. A first width indicates the distance between the opposing sidewalls of the lower region at a first location is at least 1 nm wider than a second width indicating the distance between the opposing sidewalls of the upper region at a second location, the first location being within 10 nm of the second location (or otherwise relatively close to one another). The first chemical composition is distinct from the second chemical composition and includes a surface chemical composition at an outer surface of the opposing sidewalls of the lower region and a bulk chemical composition therebetween, the surface chemical composition including one or more of oxygen, nitrogen, carbon, chlorine, fluorine, and sulfur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.