Optoelectronic devices formed over a buffer

US11069825B2 · kind B2 · utility

Assignee

• IQE plc · GB

Inventors

• Amy Wing Kwan Liu · Mountain View, US
• Dmitri Lubyshev · Bethlehem, US
• Joel M. Fastenau · Bethlehem, US
• Scott Alan Nelson · River Falls, US
• Michael Vincent Kattner · Lehighton, US
• Philip Lee Frey · Bethlehem, US
• Matthew Fetters · Allentown, US
• Hubert Krysiak · New Tripoli, US
• Zhaoquan Zeng · Nanhu, CN
• Aled Owen Morgan · Cardiff, GB
• Stuart Andrew Edwards · Cowbridge, GB

Key dates

• Filing date: May 28, 2019
• Grant date: Jul 20, 2021
• Expiry date: May 28, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/124

Abstract

An optoelectronic device includes an Sb-based metamorphic photodetector grown over a silicon substrate via a buffer layer. The device includes a layered structure. The layered structure can include a silicon substrate, a buffer layer formed over the Si substrate, and an infrared photodetector formed over the buffer layer. In some embodiments, the buffer layer includes a composite buffer layer having sublayers. For example, the composite buffer layer includes a Ge-based sublayer formed over the substrate, a III-As sublayer grown over the Ge-based sublayer, and a III-Sb sublayer formed over the III-As sublayer.