Patent · US Active

Monocrystalline semiconductor wafer and method for producing a semiconductor wafer

US11075070B2 · kind B2 · utility

1Cited by

1References

18Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Klaus Roettger · Bachmehring, DE
Herbert Becker · Coburg, DE
Leszek Mistur · Burghausen, DE
Andreas Muehe · Wetzlar, DE

Key dates

Filing date	Dec 2, 2016
Grant date	Jul 27, 2021
Priority date	—
Expiry date	Nov 18, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A monocrystalline semiconductor wafers have an average roughness Ra of at most 0.8 nm at a limiting wavelength of 250 μm, and an ESFQRavg of 8 nm or less given an edge exclusion of 1 mm. The wafers are advantageously produced by a method comprising the following steps in the indicated order:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.